kst-4017-000 1 2SC5345EF npn silicon transistor description ? rf amplifier features ? high current transition frequency f t =550mhz(typ.), [v ce =6v, i e =-1ma] ? low output capacitance : c ob =1.4pf(typ.) [v cb =6v, i e =0] ? low base time constant and high gain ? excellent noise response ordering information type no. marking package code 2sc5345e z sot-523f : h fe rank outline dimensions unit : mm . 0.68 1 2 3 0~0.1 1.11 0.05 1.60 0.1 0.88 0.1 1.60 0.1 1.00 0.1 0.25~0.30 +0.1 -0.05 s s e e m m i i c c o o n n d d u u c c t t o o r r pin connections 1. base 2. emitter 3. collector
kst-4017-000 2 absolute maximum ratings ta =2 5 c characteristic symbol ratings unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 4 v collector current i c 20 ma collector dissipation p c 150 mw junction temperature t j 150 c storage temperature range t stg -55~150 c electrical characteristics ta=25 c characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage bv cbo i c =10 a, i e =0 30 - - v collector-emitter breakdown voltage bv ceo i c =5ma, i b =0 20 - - v emitter-base breakdown voltage bv ebo i e =10 a, i c =0 4 - - v collector cut-off current i cbo v cb =30v, i e =0 - - 0.5 a emitter cut-off current i ebo v eb =4v, i c =0 - - 0.5 a dc current gain h fe * v ce =6v, i c =1ma 40 - 240 - collector-emitter saturation voltage v ce(sat) i c =10ma, i b =1ma - - 0.3 v transition frequency f t v ce =6v, i e =-1ma - 550 - mhz collector output capacitance c ob v cb =6v, i e =0, f=1mhz - 1.4 - pf * : h fe rank / r : 40~80, o : 70~140, y : 120~240 2SC5345EF
kst-4017-000 3 2SC5345EF electrical characteristic curves fig. 1 p c -t a fig. 4 f t -i e fig. 2 i c -v ce fig. 3 h fe -i c fig. 5 c ob -v cb, c ib -v eb fig. 6 yie-i c
kst-4017-000 4 electrical characteristic curves fig. 9 i c - yre 2SC5345EF fig. 8 i c -yfe fig. 7 i c -yoe
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